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Fujitsu Honored with IEEE Milestone for High Electron Mobility Transistor

  • Written by: ACN Newswire - Press Releases

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KAWASAKI, Japan, Dec 18, 2019 - (JCN Newswire) - The high electron mobility transistor (HEMT) developed by Fujitsu Laboratories has been certified as an IEEE milestone. The technology was developed by the company in 1979 and was recognized for its innovative achievements in improving the performance of radio telescopes and satellite broadcasting

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