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Fujitsu Successfully Grows Diamond Film to Boost Heat Dissipation Efficiency of GaN HEMT

  • Written by ACN Newswire - Press Releases

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TOKYO, Dec 5, 2019 - (JCN Newswire) - Fujitsu Limited and Fujitsu Laboratories Ltd. have successfully developed the world's first technology for growing a diamond film with highly-efficient heat dissipation on the surface of gallium nitride (GaN)(1) high electron mobility transistors (GaN HEMTs)(2), which are used in power amplifiers for

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