Fujitsu Successfully Grows Diamond Film to Boost Heat Dissipation Efficiency of GaN HEMT
- Written by ACN Newswire - Press Releases
TOKYO, Dec 5, 2019 - (JCN Newswire) - Fujitsu Limited and Fujitsu Laboratories Ltd. have successfully developed the world's first technology for growing a diamond film with highly-efficient heat dissipation on the surface of gallium nitride (GaN)(1) high electron mobility transistors (GaN HEMTs)(2), which are used in power amplifiers for
Read more //?#